✨ New Arrivals Just Dropped!Explore
HomeStore
Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:0.001-0.005 ohm.cm
No images
Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:0.001-0.005 ohm.cm
Thermal oxide Layer
-
Research Grade , about 80 % useful area
- SiO2 layer on 4" Silicon wafer( one side coating)
- Oxide layer thickness: 300 nm ( 3000A) +/-10%
- Refractive index - 1.455
Silicon Wafer Specifications:
- Conductive type: P-type/ B-doped
- Resistivity: R:0.001-0.005ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Size: 4" +/- 0.5 mm x 0.525 mm
- Orientation: (100) +/- 1o
- Polish: one side polished
- Surface roughness, Ra: < 5A (RMS)
Related Products
 |
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
$38.48
Original: $109.95
-65%Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:0.001-0.005 ohm.cm—
$109.95
$38.48Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Thermal oxide Layer
-
Research Grade , about 80 % useful area
- SiO2 layer on 4" Silicon wafer( one side coating)
- Oxide layer thickness: 300 nm ( 3000A) +/-10%
- Refractive index - 1.455
Silicon Wafer Specifications:
- Conductive type: P-type/ B-doped
- Resistivity: R:0.001-0.005ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Size: 4" +/- 0.5 mm x 0.525 mm
- Orientation: (100) +/- 1o
- Polish: one side polished
- Surface roughness, Ra: < 5A (RMS)
Related Products
|
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
