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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm

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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4" Silicon wafer
  • Oxide layer thickness: 300 nm   (3000A)  +/-10%
  • Growth method - Dry oxidizing at 1000oC

  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-Type/ P-doped 
  • Resistivity:                   1-10 ohm.cm
  • Size:                            4" +/- 0.5 mm x 0.5 mm
  • Orientation:                 (100) +/- 1o
  • Polish:                         one side polished
  • Surface roughness:      < 5A

  • Optional:  you may need tool below to handle the wafer ( click picture to order )

    Diamond Scriber for Cutting Single Crystal Substrate - DS-01

    Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001

    Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C

    Single Wafer Containers

$38.48

Original: $109.95

-65%
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm—

$109.95

$38.48

Product Information

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Description

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 4" Silicon wafer
  • Oxide layer thickness: 300 nm   (3000A)  +/-10%
  • Growth method - Dry oxidizing at 1000oC

  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-Type/ P-doped 
  • Resistivity:                   1-10 ohm.cm
  • Size:                            4" +/- 0.5 mm x 0.5 mm
  • Orientation:                 (100) +/- 1o
  • Polish:                         one side polished
  • Surface roughness:      < 5A

  • Optional:  you may need tool below to handle the wafer ( click picture to order )

    Diamond Scriber for Cutting Single Crystal Substrate - DS-01

    Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001

    Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C

    Single Wafer Containers

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, P-doped , 1SP R:1-10 ohm.cm | MTI Online Store