✨ New Arrivals Just Dropped!Explore
HomeStore

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm

Product image 1

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 3" Silicon wafer
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-type/ P-dped 
  • Resistivity:                 5-15   ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         3"  +/- 0.5 mm in diameter  x 0.5 mm +/- 0.05 mm th
  • Orientation:                (111) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)

  • Optional:  you may need tool below to handle the wafer ( click picture to order )

    Diamond Scriber for Cutting Single Crystal Substrate - DS-01

    Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001

    Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C

    Single Wafer Containers


Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater
$89.95
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm—
$89.95

Product Information

Shipping & Returns

Description

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 3" Silicon wafer
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-type/ P-dped 
  • Resistivity:                 5-15   ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         3"  +/- 0.5 mm in diameter  x 0.5 mm +/- 0.05 mm th
  • Orientation:                (111) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)

  • Optional:  you may need tool below to handle the wafer ( click picture to order )

    Diamond Scriber for Cutting Single Crystal Substrate - DS-01

    Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001

    Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C

    Single Wafer Containers


Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm | MTI Online Store