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Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm
Ge Wafer Specification
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Growing Method: CZ
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Orientation: (100) +/_0.5 Deg.
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Wafer Size: 2" dia x 400 microns
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Surface Polishing: Two sides epi polished
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Surface roughness: RMS or Ra:~ 10 A ( by AFM)
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Doping: Sb Doped
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Conductor type: N-type
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Resistivity: 0.001-0.01 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) -
Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754 A
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
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$209.65
Original: $599.00
-65%Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm—
$599.00
$209.65Product Information
Product Information
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Description
Ge Wafer Specification
-
Growing Method: CZ
-
Orientation: (100) +/_0.5 Deg.
-
Wafer Size: 2" dia x 400 microns
-
Surface Polishing: Two sides epi polished
-
Surface roughness: RMS or Ra:~ 10 A ( by AFM)
-
Doping: Sb Doped
-
Conductor type: N-type
-
Resistivity: 0.001-0.01 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) -
Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754 A
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
Related Product
|
|
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
