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Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (111) +/-1.5 Deg.
- Wafer Size: 2" dia x 500 microns
- Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM)
- Doping: Undoped
- Conductor type: N-type
- Resstivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754 Å
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
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$192.15
Original: $549.00
-65%Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm—
$549.00
$192.15Product Information
Product Information
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Description
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (111) +/-1.5 Deg.
- Wafer Size: 2" dia x 500 microns
- Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM)
- Doping: Undoped
- Conductor type: N-type
- Resstivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754 Å
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
Related Product
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
