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GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

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GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP

  • GaAs single crystal wafer
  • Growing Method:          VGF
  • Orientation:                  (100) 
  • Size:                            5 x 5 x 0.35 mm
  • Polishing:                     one  side polished
  • Doping:                        Te doped
  • Conductor type:            N-type
  • Carrier Concentration:   (3.04-5.98) x 10^17 /cm^3
  • Mobility:                       (3330-3850) cm^2/V.S
  • Resistivity:                  (3.14-5.34) E-3 ohm-cm
  • EPD:                           < 5000 /cm^2
  • Note:                            EPI polishing
  • RMS < 5 Angstrom


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$45.15

Original: $129.00

-65%
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP—

$129.00

$45.15

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Description

  • GaAs single crystal wafer
  • Growing Method:          VGF
  • Orientation:                  (100) 
  • Size:                            5 x 5 x 0.35 mm
  • Polishing:                     one  side polished
  • Doping:                        Te doped
  • Conductor type:            N-type
  • Carrier Concentration:   (3.04-5.98) x 10^17 /cm^3
  • Mobility:                       (3330-3850) cm^2/V.S
  • Resistivity:                  (3.14-5.34) E-3 ohm-cm
  • EPD:                           < 5000 /cm^2
  • Note:                            EPI polishing
  • RMS < 5 Angstrom


Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP | MTI Online Store