✨ New Arrivals Just Dropped!Explore
HomeStore
Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US
Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (100) +/-0.5 Deg.
- Wafer Size: 2" dia x 1000 microns
- Surface Polishing: one side epi polished
- Surface roughness: < 8 A ( by AFM)
- Doping: Sb Doped
- Conductor type: N-type
- Resistivity: 0.02 Ohms/cm
- EPD:
- Package: under 1000 class clean room
Typical Properties:
Structure: Cubic, a = 5.6754 Å
Density: 5.323 g/cm3 at room temperature
Thermal Conductivity: 640
$899.00
Ge Wafer (100) 2" dia x 1.0 mm, 1SP, N type (Sb doped), resistivities: 0.02 ohm-cm - GEsba50D10c1R002US—
$899.00
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (100) +/-0.5 Deg.
- Wafer Size: 2" dia x 1000 microns
- Surface Polishing: one side epi polished
- Surface roughness: < 8 A ( by AFM)
- Doping: Sb Doped
- Conductor type: N-type
- Resistivity: 0.02 Ohms/cm
- EPD:
- Package: under 1000 class clean room
Typical Properties:
Structure: Cubic, a = 5.6754 Å
Density: 5.323 g/cm3 at room temperature
Thermal Conductivity: 640
