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InAs, (100), Sn doped, N-type, 10mmx10mm x 0.5mm 1sp - IASna101005S1

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InAs, (100), Sn doped, N-type, 10mmx10mm x 0.5mm 1sp - IASna101005S1

  • Growth method LEC
  • Orientation (100)± 0.5 Deg
  • Orientation FlatN/A
  • DopingSn doped
  • Conductivity typeN type
  • Carrier Concentration (3-10)E17cm3
  • Mobility >11000 cm2/V.S
  • EPD <15000 / cm 2
  • Standard thickness 500 ±20 mm
  • Size  10x10 mm
  • Polishone-side



$189.00
InAs, (100), Sn doped, N-type, 10mmx10mm x 0.5mm 1sp - IASna101005S1—
$189.00

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Description

  • Growth method LEC
  • Orientation (100)± 0.5 Deg
  • Orientation FlatN/A
  • DopingSn doped
  • Conductivity typeN type
  • Carrier Concentration (3-10)E17cm3
  • Mobility >11000 cm2/V.S
  • EPD <15000 / cm 2
  • Standard thickness 500 ±20 mm
  • Size  10x10 mm
  • Polishone-side



InAs, (100), Sn doped, N-type, 10mmx10mm x 0.5mm 1sp - IASna101005S1 | MTI Online Store