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InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp
- Growth method LEC
- Orientation (111)A ± 0.5 Deg
- Orientation Flat SEMI
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <2E16 / cm-3
- Mobility >23400 cm2/V.S
- EPD <10000 / cm 2
- Resistivity: 1.3x10^-2 ohm.cm
- Standard thickness 450 ± 25 mm
- Size: 5 mm x 5mm
- Polish one-side polished
Related Product
Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
$99.00
InAs (111)A, undoped, N-type, 5mm x5mm x 0.45mm 1sp—
$99.00
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Description
- Growth method LEC
- Orientation (111)A ± 0.5 Deg
- Orientation Flat SEMI
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <2E16 / cm-3
- Mobility >23400 cm2/V.S
- EPD <10000 / cm 2
- Resistivity: 1.3x10^-2 ohm.cm
- Standard thickness 450 ± 25 mm
- Size: 5 mm x 5mm
- Polish one-side polished
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
