✨ New Arrivals Just Dropped!Explore
InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes
- Growth method LEC
- Orientation (511) ± 0.5 Deg
- Orientation Flat N/A
- Doping S doped
- Conductivity type N type
- Carrier Concentration <7E17 ~ 1E18 / cm3
- Mobility >10000 cm2/V.S
- EPD <2E4 / cm 2
- Standard thickness 500 ± 20 mm
- Size ellipse shape, (area > 30mm diameter)
- Polish one-side
Related Product
Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
$599.00
InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS511ellipes—
$599.00
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- Growth method LEC
- Orientation (511) ± 0.5 Deg
- Orientation Flat N/A
- Doping S doped
- Conductivity type N type
- Carrier Concentration <7E17 ~ 1E18 / cm3
- Mobility >10000 cm2/V.S
- EPD <2E4 / cm 2
- Standard thickness 500 ± 20 mm
- Size ellipse shape, (area > 30mm diameter)
- Polish one-side
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
