GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.

Specifications

• Semi-Insulating GaN Epitaxial Template on Sapphire (C plane)
  
• Sizes:  3” Round
• Substrate Sapphire,  Orientation c-axis (0001) +/- 1.0 ^o
• Conduction Type: n-type,undoped
• Typical Macro Defect Density:< 5cm-2
• Resistivity:>10^6 Ohm-cm
• Front Surface Finish (Ga Face) As-grown
•  Back Surface Finish Sapphire as-received finish
•  Useable Surface Area >90% 
•  Edge Exclusion Area 1mm
  Typical Macro defect Density: <5cm^-2
  
•  Package Single Wafer Container
• GaN layer thickness   5 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50um area

• Please click here to see XRD Rocking curve of GaN template
• Please click here to see Dislocation vs Thickness of GaN template
• Please click here to see RMS of GaN template

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