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Si wafer (100), 3 "dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm

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Si wafer (100), 3 "dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm

  • Single crystal                Si  
  • Conductivity:                P type  ( B doped)
  • Resistivity:                    30-100 ohm-cm  (If you would like to measure the resistivity accurately, 
                                           please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                             3" diameter
  • Thickness:                    0.1 mm
  • Orientation:                  (100)  
  • Polish:                          One side polished
  • Surface roughness:      < 5A


Optional:  you may need tool below to handle the wafer ( click picture to order )

Other Crystal wafer A-Z

Plasma Cleaner

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Dicing saw

Film Coater

$24.48

Original: $69.95

-65%
Si wafer (100), 3 "dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm

$69.95

$24.48

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Description

  • Single crystal                Si  
  • Conductivity:                P type  ( B doped)
  • Resistivity:                    30-100 ohm-cm  (If you would like to measure the resistivity accurately, 
                                           please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                             3" diameter
  • Thickness:                    0.1 mm
  • Orientation:                  (100)  
  • Polish:                          One side polished
  • Surface roughness:      < 5A


Optional:  you may need tool below to handle the wafer ( click picture to order )

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

Si wafer (100), 3 "dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm | MTI Online Store