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Si Wafer (111), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>10,000 ohm-cm) - SIUc101D05C1R10000

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Si Wafer (111), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>10,000 ohm-cm) - SIUc101D05C1R10000

Single crystal               Si   

  • Conductivity:               N type ( undoped)
  • Resistivity:                   >10000 ohm-CM
  • Size:                              4" diameter x 0.5 mm
  • Orientation:                 (111)  
  • Polish:                           One side polished
  • Surface roughness:       < 5A

Optional:  you may need tool below to handle the wafer ( click picture to order )

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater
$155.00
Si Wafer (111), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>10,000 ohm-cm) - SIUc101D05C1R10000—
$155.00

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Description

Single crystal               Si   

  • Conductivity:               N type ( undoped)
  • Resistivity:                   >10000 ohm-CM
  • Size:                              4" diameter x 0.5 mm
  • Orientation:                 (111)  
  • Polish:                           One side polished
  • Surface roughness:       < 5A

Optional:  you may need tool below to handle the wafer ( click picture to order )

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater
Si Wafer (111), 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>10,000 ohm-cm) - SIUc101D05C1R10000 | MTI Online Store