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Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001
Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001
Specifications:
- Single crystal Si, (CZ) (Prime Grade)
- Conductivity: N type ( As doped)
- Resistivity: 0.001~0.005 ohm-cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Size: 4" in diameter x 0.525 mm
- Orientation: 4 degree off (111) +/- 0.5 deg
- Polish: one side polished
- Surface roughness: < 5A, RMS
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$55.95
Si Wafer (111) with 4 deg, off, Prime Grade, 4" dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SIAsc101D05C1deg4R0001—
$55.95
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Product Information
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Shipping & Returns
Description
Specifications:
- Single crystal Si, (CZ) (Prime Grade)
- Conductivity: N type ( As doped)
- Resistivity: 0.001~0.005 ohm-cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Size: 4" in diameter x 0.525 mm
- Orientation: 4 degree off (111) +/- 0.5 deg
- Polish: one side polished
- Surface roughness: < 5A, RMS
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
