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Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

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Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

  • Single crystal Silicon
  • Conductive type: P type/ Boron doped 
  • Resistivity: 0.1 - 10 ohm-cm (If you would like to measure the resistivity accurately, 
    please order our Portable 4 Probe Resistivity Testing Instrument
  • Size: 50.8 diameter +/- 0.5 mm x 0.28 +/- 0.025 mm
  • Orientation: (111) +/- 1o
  • Polish: one side polished
  • Surface roughness: < 5A
$45.95
Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01
$45.95

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  • Single crystal Silicon
  • Conductive type: P type/ Boron doped 
  • Resistivity: 0.1 - 10 ohm-cm (If you would like to measure the resistivity accurately, 
    please order our Portable 4 Probe Resistivity Testing Instrument
  • Size: 50.8 diameter +/- 0.5 mm x 0.28 +/- 0.025 mm
  • Orientation: (111) +/- 1o
  • Polish: one side polished
  • Surface roughness: < 5A
Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01 | MTI Online Store