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VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp
GaAs single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 10x10x0.5mm
Polishing: one side polished
Doping: Si doped
Conductor type: S-C-N
Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
Mobility: 2170-2650 cm^2/V.S
EPD: <5000/cm^2
resistivity: (2.56-3.55)x10^-3 ohm.cmGrowing Method: VGF
Orientation: (100)
Size: 10x10x0.5mm
Polishing: one side polished
Doping: Si doped
Conductor type: S-C-N
Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
Mobility: 2170-2650 cm^2/V.S
EPD: <5000/cm^2
Ra(Average Roughness) : < 0.4 nm
$62.65
Original: $179.00
-65%VGF-GaAs (100) orientation, Si-doped 10x10x 0.5mm, 1sp—
$179.00
$62.65Product Information
Product Information
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Description
GaAs single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 10x10x0.5mm
Polishing: one side polished
Doping: Si doped
Conductor type: S-C-N
Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
Mobility: 2170-2650 cm^2/V.S
EPD: <5000/cm^2
resistivity: (2.56-3.55)x10^-3 ohm.cmGrowing Method: VGF
Orientation: (100)
Size: 10x10x0.5mm
Polishing: one side polished
Doping: Si doped
Conductor type: S-C-N
Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
Mobility: 2170-2650 cm^2/V.S
EPD: <5000/cm^2
Ra(Average Roughness) : < 0.4 nm
