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VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)

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VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)

Ge Wafer Specification

  • Growing Method:                VGF
  • Orientation:                        (100) +/-0.5 Deg.
  • Wafer Size:                       100(+/-0.4) mm  dia x  175(+/-25) microns  
  • Surface Polishing:              One side  polished
  • Surface roughness:             < 8 A
  • Doping:                             Ga Doped
  • Conductor type:                 P-type
  • Resistivity:                        (0.182-0.327) Ohm.cm (If you would like to measure the resistivity accurately, 
                                           please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • Carrier Concentration:        (0.92-4.13) E16 /c.c
  • Mobility:                           (1520-2090) cm^2/v.s
  • EPD:                                <=500 /cm^2
  • Package:                          under 1000 class clean room      

Typical Properties:

  • Structure:                         Cubic, a = 5.6754Å
  •  Density:                           5.323 g/cm3 at room temperature
  • Melting Point:                    937.4 oC
  • Thermal Conductivity:         640


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VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)—
$1,595.00

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Description

Ge Wafer Specification

  • Growing Method:                VGF
  • Orientation:                        (100) +/-0.5 Deg.
  • Wafer Size:                       100(+/-0.4) mm  dia x  175(+/-25) microns  
  • Surface Polishing:              One side  polished
  • Surface roughness:             < 8 A
  • Doping:                             Ga Doped
  • Conductor type:                 P-type
  • Resistivity:                        (0.182-0.327) Ohm.cm (If you would like to measure the resistivity accurately, 
                                           please order our     Portable 4 Probe Resistivity Testing Instrument.)
  • Carrier Concentration:        (0.92-4.13) E16 /c.c
  • Mobility:                           (1520-2090) cm^2/v.s
  • EPD:                                <=500 /cm^2
  • Package:                          under 1000 class clean room      

Typical Properties:

  • Structure:                         Cubic, a = 5.6754Å
  •  Density:                           5.323 g/cm3 at room temperature
  • Melting Point:                    937.4 oC
  • Thermal Conductivity:         640


Related Product

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