Ge Wafer Specification

• Growing Method:               VGF
• Orientation:                      (100) +/-0.4 Deg.
• Wafer Size:                      100mm  dia x 500 microns  
• Surface Polishing:              Two sides polished
• Surface roughness:            < 8 A ( by AFM)
• Doping:                            Ga Doped
• Conductor type:                 P-type
• Resistivity:                       0.128-0.303Ohm.cm (If you would like to measure the resistivity accurately, 
                                       please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration:        (1.07-2.89) x10^16 /c.c
• Mobility:                          1690-2070 cm^2/Vs
• EPD:                               <500 /cm
• Ra(Average Roughness) :   < 0.4 nm  
• Package:                         under 1000 class clean room

Typical Properties:

• Structure:                        Cubic, a = 5.6754Å
•  Density:                          5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640