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VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp
InP single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Zn doped
Conducting type: S-C
Polish: one side polished
Resistivity: (5.61-6.84)E-2 ohm.cm
Mobility: 81-85 cmE2/V.S
EPD: < 5000 /cmE2
Carrier Concerntration: (1.09-1.37) E18 /cm^3
Ra(Average Roughness) : < 0.4 nm
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Zn doped
Conducting type: S-C
Polish: one side polished
Resistivity: (5.61-6.84)E-2 ohm.cm
Mobility: 81-85 cmE2/V.S
EPD: < 5000 /cmE2
Carrier Concerntration: (1.09-1.37) E18 /cm^3
Ra(Average Roughness) : < 0.4 nm
EPI ready surface and packing
$475.65
Original: $1,359.00
-65%VGF InP (100) Zn doped, 2" x 0.35mm, wafer, 1sp—
$1,359.00
$475.65Product Information
Product Information
Shipping & Returns
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Description
InP single crystal wafer
Growing Method: VGF
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Zn doped
Conducting type: S-C
Polish: one side polished
Resistivity: (5.61-6.84)E-2 ohm.cm
Mobility: 81-85 cmE2/V.S
EPD: < 5000 /cmE2
Carrier Concerntration: (1.09-1.37) E18 /cm^3
Ra(Average Roughness) : < 0.4 nm
Orientation: (100)
Size: 2" diameter x 0.35 mm
Doping: Zn doped
Conducting type: S-C
Polish: one side polished
Resistivity: (5.61-6.84)E-2 ohm.cm
Mobility: 81-85 cmE2/V.S
EPD: < 5000 /cmE2
Carrier Concerntration: (1.09-1.37) E18 /cm^3
Ra(Average Roughness) : < 0.4 nm
EPI ready surface and packing
