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1200°C MIST CVD Furnace for Crystal Growth- OTF-1200X-Mist

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1200°C MIST CVD Furnace for Crystal Growth- OTF-1200X-Mist

SPECIFICATIONS:

Features

 OTF-1200X-Mist is a 1200ºC tube furnace integrated with an ultrasonic mist system for epitaxial thin film or single crystal growth via the mist CVD method, also called Aerosol-assisted chemical vapor deposition (AACVD) 

Furnace
  • The splitable tube furnace with 1200 °C Max. working temperature 
  • 400 mm length heating zone with 125 mm length constant temperature zone.
  • 30 segments programmable temperature controller with +/- 1ºC  accuracy
  • Power: 3KW, 220VAC ( +/- 10% single phase 50/60Hz
  • Click the picture left to see detailed specs
  • Note: working temperature can be upgraded to 1500oC by OTF-1500X-UL

Quartz Tube & Sample Holder
  • A quartz processing tube with flanges and the size of OD 60 mm x ID 54 mm x L 1000 mm is included
  • One quartz sample holder is included, which can hold 4 pcs of 10x10x0.5 mm substrate at 45 degrees.
  • Click the picture to the left to order a spare

Ultrasonic Mis Generator
  •  1.7 Mhz ultrasonic generator is located in an airtight SS316 tank. ( click Pic left for specs )
    •  4 levels of ultrasonic power are for adjusting the mist amount
    • Mist time is 30 - 180 minutes, adjustable
  • A liquid syringe pump is equipped to inject automatically which comes with a 60 ml plastic syringe. The speed range for the liquid injection pump is 0.004 ml/min - 70 ml/min
  • The mist generator is connected to a tube furnace via a 1/4" stainless steel tube

MFC Gas Delivery System
  • 4-channel MFC gas mixing and delivering station is included ( Click Pic left for specs)
  • 2 channel gases are filled into a stainless steel tank as the carrying gas after mixing
  • another 2 channels of gases are filled into a tube furnace as diluting gas after mixing
  • MFC flow rate: 0 - 500 ml/ minute adjustable
  • MFC flow accuracy: ±0.2%F.S
  • Working pressure range: 0.10.5 MPa

Vacuum Pump ( optional )
  • KF 25 vacuum port is installed on the flange of the processing tube with a valve to connect to a vacuum pump
  • A dry pump is strongly recommended for the longer service life of Mist CVD.
  • Please click the picture left to order a pump if you need

Control Panel
  • Touch screen control panel to set operation parameters, including
    • Temperature program and curve
    • 4 channels gas flow rate
    • Mist-generating level and time
  • RS 485 port and PC operation software is available upon request
Dimensions TBD
Net Weight TBD
Warranty
One-year limited warranty with lifetime support (Consumable parts such as processing tubes and o-rings are not covered by the warranty, please order the replacement at related products below.)
Application
This kind of MIST CVD can be used to grow Ga2O3 crystal with high quality

Compliance
  • CE Certified
  • NRTL or CSA certification is available at extra cost.
Reference article
  • EPITAXIAL GROWTH OF Γ-GA2O3 FILMS BY MIST CHEMICAL VAPOR DEPOSITION
  • Ga(acac)3 - [CH3COCH=C(O-)CH3]3Ga - Gallium(III) acetylacetonate
  • MgAlO4 substrate
$58,985.00
1200°C MIST CVD Furnace for Crystal Growth- OTF-1200X-Mist—
$58,985.00

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Description

SPECIFICATIONS:

Features

 OTF-1200X-Mist is a 1200ºC tube furnace integrated with an ultrasonic mist system for epitaxial thin film or single crystal growth via the mist CVD method, also called Aerosol-assisted chemical vapor deposition (AACVD) 

Furnace
  • The splitable tube furnace with 1200 °C Max. working temperature 
  • 400 mm length heating zone with 125 mm length constant temperature zone.
  • 30 segments programmable temperature controller with +/- 1ºC  accuracy
  • Power: 3KW, 220VAC ( +/- 10% single phase 50/60Hz
  • Click the picture left to see detailed specs
  • Note: working temperature can be upgraded to 1500oC by OTF-1500X-UL

Quartz Tube & Sample Holder
  • A quartz processing tube with flanges and the size of OD 60 mm x ID 54 mm x L 1000 mm is included
  • One quartz sample holder is included, which can hold 4 pcs of 10x10x0.5 mm substrate at 45 degrees.
  • Click the picture to the left to order a spare

Ultrasonic Mis Generator
  •  1.7 Mhz ultrasonic generator is located in an airtight SS316 tank. ( click Pic left for specs )
    •  4 levels of ultrasonic power are for adjusting the mist amount
    • Mist time is 30 - 180 minutes, adjustable
  • A liquid syringe pump is equipped to inject automatically which comes with a 60 ml plastic syringe. The speed range for the liquid injection pump is 0.004 ml/min - 70 ml/min
  • The mist generator is connected to a tube furnace via a 1/4" stainless steel tube

MFC Gas Delivery System
  • 4-channel MFC gas mixing and delivering station is included ( Click Pic left for specs)
  • 2 channel gases are filled into a stainless steel tank as the carrying gas after mixing
  • another 2 channels of gases are filled into a tube furnace as diluting gas after mixing
  • MFC flow rate: 0 - 500 ml/ minute adjustable
  • MFC flow accuracy: ±0.2%F.S
  • Working pressure range: 0.10.5 MPa

Vacuum Pump ( optional )
  • KF 25 vacuum port is installed on the flange of the processing tube with a valve to connect to a vacuum pump
  • A dry pump is strongly recommended for the longer service life of Mist CVD.
  • Please click the picture left to order a pump if you need

Control Panel
  • Touch screen control panel to set operation parameters, including
    • Temperature program and curve
    • 4 channels gas flow rate
    • Mist-generating level and time
  • RS 485 port and PC operation software is available upon request
Dimensions TBD
Net Weight TBD
Warranty
One-year limited warranty with lifetime support (Consumable parts such as processing tubes and o-rings are not covered by the warranty, please order the replacement at related products below.)
Application
This kind of MIST CVD can be used to grow Ga2O3 crystal with high quality

Compliance
  • CE Certified
  • NRTL or CSA certification is available at extra cost.
Reference article
  • EPITAXIAL GROWTH OF Γ-GA2O3 FILMS BY MIST CHEMICAL VAPOR DEPOSITION
  • Ga(acac)3 - [CH3COCH=C(O-)CH3]3Ga - Gallium(III) acetylacetonate
  • MgAlO4 substrate
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