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1200°C Max. Compact Auto-Sliding PECVD Furnace w/ 2" Tube and Vacuum Pump, - OTF-1200X-S50-PESL

1200°C Max. Compact Auto-Sliding PECVD Furnace w/ 2" Tube and Vacuum Pump, - OTF-1200X-S50-PESL
OTF-1200X-50S-PESL is an affordable and compact PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system with a slideable mechanism. It consists of a 300W RF plasma generator, a 2"O.D split tube furnace, and the integrated slidable rail which allows you to preheat and slide the furnace to the sample zone in order to get your sample an instant exposure under high temperature. This system can be updated to an advanced model with options. It is an ideal tool for the researcher to make innovations under a limited budget.
- Lower temperature processing compared to conventional CVD.
- High heating & cooling rate using sliding furnace
- Film stress can be controlled by high/low frequency mixing techniques.
- Control over stoichiometry via process conditions.
- Can do a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.
Specifications:
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From $16,446.15
Original: $46,989.00
-65%1200°C Max. Compact Auto-Sliding PECVD Furnace w/ 2" Tube and Vacuum Pump, - OTF-1200X-S50-PESL—
$46,989.00
$16,446.15Product Information
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Description
OTF-1200X-50S-PESL is an affordable and compact PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system with a slideable mechanism. It consists of a 300W RF plasma generator, a 2"O.D split tube furnace, and the integrated slidable rail which allows you to preheat and slide the furnace to the sample zone in order to get your sample an instant exposure under high temperature. This system can be updated to an advanced model with options. It is an ideal tool for the researcher to make innovations under a limited budget.
- Lower temperature processing compared to conventional CVD.
- High heating & cooling rate using sliding furnace
- Film stress can be controlled by high/low frequency mixing techniques.
- Control over stoichiometry via process conditions.
- Can do a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.
Specifications:




























